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savantic semiconductor product specification silicon npn power transistors 2SC4149 d escription with ito-220 package switching power transistor low saturation voltage pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 40 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a i b base current 1.5 a i bm base current-peak 2 a p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 5.0 /w fig.1 simplified outline (ito-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4149 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 40 v v cesat collector-emitter saturation voltage i c =5a; i b =0.25a 0.3 v v besat base-emitter saturation voltage i c =5a; i b =0.25a 1.2 v i cbo collector cut-off current i ceo collector cut-off current at rated volatge 0.1 ma i ebo emitter cut-off current at rated volatge 0.1 ma h fe dc current gain i c =5a ; v ce =2v 70 f t transition frequency i c =1a ; v ce =10v 50 mhz switching times t on turn-on time 0.3 s t s storage time 1.5 s t f fall time i c =5a;i b1 =0.5a i b2 =0.5a ,r l =5 b v bb2 =4v 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4149 package outline fig.2 outline dimensions (unindicated tolerance:0.20 mm)

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